semiconductor group 1 npn silicon transistors for high voltages smbta 42 smbta 43 maximum ratings type ordering code (tape and reel) marking package 1) pin configuration smbta 42 smbta 43 q68000-a6478 q68000-a6482 s1d s1e sot-23 b e c 1 2 3 1) for detailed information see chapter package outlines. 2) package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm 2 cu. parameter symbol values unit emitter-base voltage v eb0 collector-base voltage v cb0 junction temperature t j ?c total power dissipation, t s = 74 ?c p tot mw storage temperature range t stg collector-emitter voltage v ce0 v thermal resistance junction - ambient 2) r th ja 280 k/w 6 360 150 C 65 + 150 300 200 smbta 42 smbta 43 collector current i c ma 500 base current i b 100 junction - soldering point r th js 210 300 200 l high breakdown voltage l low collector-emitter saturation voltage l complementary types: smbta 92, smbta 93 (pnp)
semiconductor group 2 smbta 42 smbta 43 electrical characteristics at t a = 25 ?c, unless otherwise specified. dc current gain i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v 1) i c = 30 ma, v ce = 10 v 1) smbta 42 smbta 43 v collector-emitter breakdown voltage i c = 1 ma smbta 42 smbta 43 v (br)ce0 300 200 C C C C na na m a m a collector-base cutoff current v cb = 200 v smbta 42 v cb = 160 v smbta 43 v cb = 200 v, t a = 150 ?c smbta 42 v cb = 160 v, t a = 150 ?c smbta 43 i cb0 C C C C C C C C 100 100 20 20 unit values parameter symbol min. typ. max. dc characteristics emitter-base breakdown voltage i e = 100 m a v (br)eb0 6CC v collector-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma smbta 42 smbta 43 v cesat C C C C 0.5 0.4 C h fe 25 40 40 40 C C C C C C C C mhz transition frequency i c = 10 ma, v ce = 20 v, f = 100 mhz f t 50 C C ac characteristics pf output capacitance v cb = 20 v, f = 1 mhz smbta 42 smbta 43 c obo C C C C 3 4 collector-base breakdown voltage i c = 100 m a smbta 42 smbta 43 v (br)cb0 300 200 C C C C na emitter-base cutoff current v eb = 3 v i eb0 C C 100 base-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat C C 0.9 1) pulse test conditions: t 300 m s, d = 2 %.
semiconductor group 3 smbta 42 smbta 43 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy permissible pulse load p tot max / p tot dc = f ( t p ) transition frequency f t = f ( i c ) v ce = 10 v, f = 100 mhz operating range i c = f ( v ce0 ) t a = 25 ?c, d = 0
semiconductor group 4 smbta 42 smbta 43 collector cutoff current i cb0 = f ( t a ) v cb = 160 v dc current gain h fe = f ( i c ) v ce =10v collector current i c = f ( v be ) v ce =10v
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